First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor


This letter reports on the primary demonstration of microwave power performance at 10 GHz on versatile AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at $textV_mathrm GS = zero$ V and a peak extrinsic transconductance of 293 mS/mm are obtained for a $2times 50 times zero.1~mu textm^2$ versatile device. At $textV_mathrm DS = five$ V, never-ending-wave saturation output power density of zero.42 W/mm is achieved at 10 GHz, and associated with a most power-added potency of twenty nine.8% and a linear power gain of fifteen.eight dB. The device exhibits an intrinsic current gain cutoff frequency $F_T$ of 38 GHz and a most oscillation frequency $textF_mathrm MAX$ of seventy five GHz. This result demonstrates the potential of flexible GaN-primarily based HEMT for the event of applications requiring mechanical flexibility, high frequency operation, with high power performance.

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