Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

1 1 1 1 1 Rating 4.75 (2 Votes)

PROJECT TITLE :

First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor

ABSTRACT:

This letter reports on the primary demonstration of microwave power performance at 10 GHz on versatile AlGaN/GaN high-electron-mobility transistor (HEMT). A maximum dc current density of 620 mA/mm at $textV_mathrm GS = zero$ V and a peak extrinsic transconductance of 293 mS/mm are obtained for a $2times 50 times zero.1~mu textm^2$ versatile device. At $textV_mathrm DS = five$ V, never-ending-wave saturation output power density of zero.42 W/mm is achieved at 10 GHz, and associated with a most power-added potency of twenty nine.8% and a linear power gain of fifteen.eight dB. The device exhibits an intrinsic current gain cutoff frequency $F_T$ of 38 GHz and a most oscillation frequency $textF_mathrm MAX$ of seventy five GHz. This result demonstrates the potential of flexible GaN-primarily based HEMT for the event of applications requiring mechanical flexibility, high frequency operation, with high power performance.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


First Power Performance Demonstration of Flexible AlGaN/GaN High Electron Mobility Transistor - 4.5 out of 5 based on 2 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...