Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

A Modified 1/ Noise Model for MOSFETs With Ultra-Thin Gate Oxide

1 1 1 1 1 Rating 4.89 (71 Votes)

PROJECT TITLE :

A Modified 1/ Noise Model for MOSFETs With Ultra-Thin Gate Oxide

ABSTRACT:

A modified 1/ $f$ noise model has been proposed for MOSFETs with an ultra-thin gate oxide layer. It is revealed that because the gate length $L$ deceases, the normalized drain current noise spectra density also decreases, which does not coincide with the regular one/ $f$ noise theory. It's found that the trap-assisted gate leakage affects the drain current 1/ $f$ noise, and for the primary time, it's demonstrated that the equivalent oxide entice density, the free carrier density, and $L$ verify the 1/ $f$ noise. A modified quantitative model is then proposed, that can well predict the one/ $f$ noise.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


A Modified 1/ Noise Model for MOSFETs With Ultra-Thin Gate Oxide - 4.9 out of 5 based on 71 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...