A Modified 1/ Noise Model for MOSFETs With Ultra-Thin Gate Oxide


A modified 1/ $f$ noise model has been proposed for MOSFETs with an ultra-thin gate oxide layer. It is revealed that because the gate length $L$ deceases, the normalized drain current noise spectra density also decreases, which does not coincide with the regular one/ $f$ noise theory. It's found that the trap-assisted gate leakage affects the drain current 1/ $f$ noise, and for the primary time, it's demonstrated that the equivalent oxide entice density, the free carrier density, and $L$ verify the 1/ $f$ noise. A modified quantitative model is then proposed, that can well predict the one/ $f$ noise.

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