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Performance of InGaN/AlGaInN Near-UV LEDs With Ni/Ga2O3/Ag/Ga2O3 Electrode

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PROJECT TITLE :

Performance of InGaN/AlGaInN Near-UV LEDs With Ni/Ga2O3/Ag/Ga2O3 Electrode

ABSTRACT:

We fabricated Ga2O3-primarily based clear conductive electrodes (TCEs) for use in close to-ultraviolet (NUV) light-emitting diodes (LEDs) by embedding metal layers into Ga2O3. We use Ni and Ag layers to boost current injection and spreading properties. Our fabricated Ni/Ga2O3/Ag/Ga2O3 multilayer (annealed at 60zero °C, one min) deposited on an NUV LED wafer exhibits eighty three% transmittance at 385 nm with a specific contact resistance of $eight times ten^-3~Omega ~cdot $ cm2. An NUV LED fabricated with a Ni/Ga2O3/Ag/Ga2O3 TCE exhibits a 17% increase in light-weight output power at a hundred and fifty mA and a three.a pair of% decrease in forward voltage at 20 mA over those of an indium tin oxide NUV LED.


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Performance of InGaN/AlGaInN Near-UV LEDs With Ni/Ga2O3/Ag/Ga2O3 Electrode - 4.6 out of 5 based on 54 votes

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