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Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio

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PROJECT TITLE :

Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio

ABSTRACT:

A CMOS process compatible p-channel tunnel field-impact transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current ( at V after adjustment), ultra-low OFF-state current, and sensible average subthreshold swing (S.S. mV/ decade up to ten nA/ ). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.


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Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF Ratio - 4.8 out of 5 based on 49 votes

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