Germanium n-Channel Planar FET and FinFET: Gate-Stack and Contact Optimization


We have a tendency to demonstrate Ge enhancement-mode nMOS FinFETs fabricated on 300-mm Si wafers, incorporating an optimized gate-stack (interface lure density Dit below 2 × 1011 eV-1 · cm-two), n+-doping (active doping concentration Nact exceeding one × 1020 cm-three), and metallization (contact resistivity Pc below 2 × 10-seven Ω · cm2) modules. A brand new circular transmission line Pc extraction model that captures the parasitic metal resistance is proposed. At a offer voltage VDD of zero.5 V, forty-nm-gate-length FinFET devices achieved an ON-performance ION of 50 μA/μm at an OFF-state current IOFF of 100 nA/μm, a subthreshold swing Ssat of 124 mV/decade, and a peak transconductance gm of 310 μS/μm. The identical gate-stack and contacts were deployed on planar devices for comparison. Each FinFET and planar devices in this paper achieved the best reported gm/Ssat at VDD = zero.5 V so far and the shortest gate lengths for Ge nMOS enhancement-mode transistors.

Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here

PROJECT TITLE :Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET With High Tunneling Current and High ON/OFF RatioABSTRACT:A CMOS process compatible p-channel tunnel field-impact transistor
PROJECT TITLE :Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETsABSTRACT:We tend to explore the impact of varying channel thickness (from 8 to one.5 nm) on extraordinarily thin germanium n-MOSFETs, by explicitly
PROJECT TITLE :Impact of Asymmetric Configurations on the Heterogate Germanium Electron–Hole Bilayer Tunnel FET Including Quantum ConfinementABSTRACT:We investigate the effect of asymmetric configurations on the heterogate germanium
PROJECT TITLE :Modeling of Edge-Emitting Lasers Based on Tensile Strained Germanium MicrostripsABSTRACT:During this paper, we gift a thorough modeling of a grip-emitting laser based on strained germanium (Ge) microstrips. The
PROJECT TITLE :Predictions of Free-Carrier Electroabsorption and Electrorefraction in GermaniumABSTRACT:Germanium is changing into an vital material for mid-infrared photonics, however the modulation mechanisms in Ge don't seem

Ready to Complete Your Academic MTech Project Work In Affordable Price ?

Project Enquiry