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Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs

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PROJECT TITLE :

Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs

ABSTRACT:

Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to realize target $I_mathrmscriptscriptstyle ON$ , together with excellent three-D electrostatic management of the channel. Although the self-heating effect has been a persistent concern, the present characterization ways, based mostly on indirect live of mobility and specialised check structures, don't provide adequate spatiotemporal resolution. During this paper, we have a tendency to develop an ultrafast high-resolution thermoreflectance (TR) imaging technique to: 1) directly observe the increase in local surface temperature of the GAA-FET with different range of NWs; 2) characterize/interpret the time constants of heating and cooling through high-resolution transient measurements; three) determine critical methods for warmth dissipation; and 4) detect in situ time-dependent breakdown of individual NW. Combined with the complementary approaches that probe the inner temperature of the NWs, the TR-images supply a high-resolution map of self-heating within the surround-gate devices with unprecedented precision, necessary for the validation of electrothermal models and the optimization of devices and circuits. Further, we tend to develop the straightforward compact model of the complicated structure, that can make a case for experimental observations and will provide the inner temperature of the NWs.


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Direct Observation of Self-Heating in III–V Gate-All-Around Nanowire MOSFETs - 4.8 out of 5 based on 46 votes

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