PROJECT TITLE :
High-Performance Electrolyte–Insulator–Semiconductor pH Sensors Using High- CeO2 Sensing Films
(EIS) sensor using a high-κ CeO2 sensing membrane, which was deposited on a Si substrate through sputtering. We have a tendency to used X-ray diffraction and X-ray photoelectron spectroscopy to check the structural properties of these films that were annealed at various temperatures. The CeO2 EIS sensor annealed at 900 °C exhibited the next sensitivity of 64.eight mV/pH, lower hysteresis voltage of 1 mV, and smaller drift rate of 0.seventy eight mV/h compared with alternative annealing temperatures, presumably suggesting the formation of a well-crystallized CeO2 film that includes a high dielectric constant and having a high fraction of Ce3+.
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