Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices


In this letter, we report the impact of post-oxide deposition annealing on the performance of HfO2-primarily based resistive random access memory (RRAM) devices, specifically, oxygen-ion-based oxide RRAM (OxRRAM) and Cu-ion-based mostly conductive-bridge RAM (CBRAM) devices. Considerable degradation of the ON/OFF ratio and switching properties was observed in the OxRRAM devices once high-temperature annealing in vacuum, that is attributed to a considerable amount of oxygen vacancies created within the switching layer. However, the substantial improvement in device performance, like stable switching, high switching cycles, decreased set/reset voltages, and close to-one hundredpercent device yield, were obtained in the CBRAM devices throughout the post-HfO2 deposition annealing in vacuum.

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