Enhanced Efficiency in Backside-Illuminated Deep-n-Well-Assisted CMOS Photovoltaic Devices


A backside-illuminated deep-n-well-assisted CMOS photovoltaic device with a thinned substrate and an antireflective surface is demonstrated to improve the photocurrent collection potency from the low-lifetime bulk. The deep-n-well layer in an exceedingly standard bulk CMOS process is utilized to maximise the junction space so as to collect additional photocurrent before being recombined. An array of pyramid structure is realized to reduce the surface reflectivity and generate a lot of photocurrent in the bulk. All efforts result in a thirty three.thirty sevenp.c ultimate efficiency and a one.67-mW electrical power beneath 5-mW irradiated 980-nm illumination. With the unique benefits of high efficiency and CMOS compatibility, it's promising to practically integrate the proposed photovoltaic device with different microelectronics to appreciate a self-powered system.

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