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0.34 AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

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PROJECT TITLE :

0.34 AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal

ABSTRACT:

A large GaN-Schottky barrier diode (SBD) with a recessed twin anode metal is proposed to achieve improved the forward characteristics while not a degradation of the reverse performances. Using optimized dry etch condition for a large device, the electrical characteristics of the device are demonstrated when applying the recessed twin anode metal and changing the recess depths. The device size and channel width are four mm2 and 63 mm, respectively. The sixteen-nm recessed twin anode metal SBD has a turn-ON voltage of 0.thirty four V, a breakdown voltage of 802 V, and a reverse leakage current of 1.82 μA/mm at -15 V. The packaged SBD exhibits a forward current of vi.2 A at 2 V and a reverse recovery charge of eleven.54 nC.


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0.34 AlGaN/GaN-on-Si Large Schottky Barrier Diode With Recessed Dual Anode Metal - 4.9 out of 5 based on 70 votes

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