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TCAD Simulation Study of the Single-Event Effects in Silicon Nanowire Transistors

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PROJECT TITLE :

TCAD Simulation Study of the Single-Event Effects in Silicon Nanowire Transistors

ABSTRACT:

Three-dimensional TCAD device simulation is disbursed to check single-event effects in silicon nanowire devices. The results show that charge collection appears in silicon nanowire devices following the incidence of serious ions, that is kind of like what is observed during a ancient MOSFET. The charge assortment mechanism is analyzed in detail. We have a tendency to notice that a important amplification bipolar effect exists in the charge assortment process, enhancing the charge collection manifold. The effects of the doping sort and the channel length on the charge assortment are studied, and also the charge collection is compared with that in bulk CMOS transistors. Furthermore, single-event responses are studied in an inverter consisting of nanowire transistors.


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TCAD Simulation Study of the Single-Event Effects in Silicon Nanowire Transistors - 4.9 out of 5 based on 71 votes

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