PROJECT TITLE :
Third-Order Intermodulation of an MEMS Clamped-Clamped Beam Capacitive Power Sensor Based on GaAs Technology
This letter presents a comprehensive theoretical and experimental study of the third-order intermodulation (IM3) during a microelectromechanical system capacitive power sensor with clamped-clamped beam at -band. A straightforward model is developed to investigate the origin of IM3. High linearity of the sensor is demonstrated by twin-tone signal measurements both in frequency interval ( ) dependence and input power dependence. The worst IM3 product for various remains less than −39 dBm at an input of dBm. Third-order intercept points of 29.three dBm at Hz and 33.two dBm at kHz are derived by measurements.
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