Development of 2-D Boron Nitride Nanosheets UV Photoconductive Detectors


We have a tendency to report on our new approach to low-temperature synthesis of high-quality single crystalline wide bandgap boron nitride nanosheets (BNNSs) semiconductor for the event of deep ultraviolet (UV) photoconductive detectors. We tend to focus our experiments on studies of electrical and electronic properties, in addition to sensitivity, response and recovery times, and repeatability of newly fabricated deep UV detectors. Raman scattering spectroscopy, X-ray diffraction, scanning electron microscope (SEM), transmission electron microscopy (TEM), and electrometers were used to characterize the BNNS photoconductive materials. The SEM and TEM measurements clearly indicate that every sample consists of a big amount of high-quality BNNSs. High transparency related to high quality of crystalline structures of BNNS has been identified. Primarily based on the synthesized BNNSs, deep UV detector is designed, fabricated, and tested. High sensitivity, fast time responsivity

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