Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation


High-performance power switching devices [insulated-gate bipolar transistors (IGBTs)] notice high-performance power converters. Unfortunately, with a high switching speed of the IGBT-freewheel diode chopper cell, the circuit becomes intrinsic sources of high-level electromagnetic interference (EMI). Thus, pricey EMI filters or shielding is normally demanded on the load and provide sides. An S-formed voltage transient with a high-order time by-product eliminates the discontinuity in the switching transient and will suppress high-frequency spectrum of EMI emissions. Additional importantly, it provides an improved tradeoff between EMI generation and switching time, thus switching losses. This promising tradeoff will be explored any for higher high-frequency EMI suppression by using the infinitely differentiable characteristics of Gaussian S-formed transients. But, current gate drive schemes cannot achieve the S shaping. In this paper, active voltage management is applied and improved successfully to define IGBT switching dynamics with a smoothed Gaussian waveform.

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