Back Channel Anodization Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Process


A back channel anodization (BCA) method for fabrication of amorphous indium gallium zinc oxide thin-flim transistors (a-IGZO TFTs) is proposed and demonstrated for the primary time. Within the BCA method, a localized anodic oxidization (anodization) is successfully implemented to convert the metal layer on back channel into insulator for channel passivation, with the metal layer on supply/drain regions intact. As a result, supply/drain electrodes and the rear channel passivation layer are fashioned simultaneously in the process step of the BCA. The characterization results show that the fabricated a-IGZO TFTs utilizing BCA process have comparable electrical performances and superior gate-bias stress stability to the traditional a-IGZO TFTs with source/drain electrodes patterned by liftoff.

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