High-Frequency Performance of Trigate Poly-Si Thin-Film Transistors by Microwave Annealing


This letter investigates the high-frequency performance of trigate polycrystalline silicon thin-film trans- istors (poly-Si TFTs) using low temperature microwave annealing (MWA). MWA exhibits sufficient dopant activation efficiency, smart short channel effect management, and a higher most oscillation frequency ( $f_mathrm mathbf max)$ of poly-Si TFTs than will fast thermal annealing. In addition, MWA can fabricate nanoscale devices. Poly-Si TFTs with short channel annealed by microwave reveals better high-frequency performance and switching characteristics.

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