PROJECT TITLE :
Effects of Surface Passivation and Deposition Methods on the 1/ $f$ Noise Performance of AlInN/AlN/GaN High Electron Mobility Transistors
This letter reports on effects of Si3N4 and Al2O3 surface passivation along with totally different deposition ways on the low-frequency noise (LFN) characteristics for AlInN/AlN/GaN high electron mobility transistors (HEMTs). Two samples are passivated with Al2O3, deposited by 2 completely different methods: one) thermal atomic layer deposition (ALD) and a pair of) plasma-assisted ALD. The third sample is passivated with Si3N4 using plasma-enhanced chemical vapor deposition. The LFN of the 3 samples is measured under a bias condition relevant for amplifier and oscillator applications. It is found that the surface passivation contains a major impact on the noise level. The simplest surface passivation, with respect to LFN, is that the thermal ALD Al2O3 for that the noise current spectral density measured at ten kHz is $1times 10^-14$ Hz $^-1$ for a bias of $ V_rm dd$ / $ I_rm dd = ten$ V/80 mA. To the most effective of our data, this result sets a commonplace as the best reported LFN of AlInN/GaN HEMTs. It is also in the same order as smart industrial AlGaN/GaN HEMTs reported in literature and therefore demonstrates that AlInN/GaN HEMTs, passivated with thermal ALD Al2O3, is a sensible candidate for millimeter-wave power generation.
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