Effect of Surrounded-Channel Structure on Electrical Characteristics of $c$ -Axis Aligned Crystalline In–Ga–Zn–O Field-Effect Transistor


During this letter, we report the electrical characteristics of a crystalline oxide semiconductor, particularly $boldsymbol c$ -axis aligned crystalline In–Ga–Zn–O (CAAC-IGZO) field-impact transistors (FETs) having a surrounded-channel structure with 51-nm channel lengths, 11-nm equivalent oxide thicknesses of the gate insulating films, and varied channel widths. The results show that the influence of the gate electrode on the perimeters of the channel increases because the channel width is reduced, that ends up in glorious OFF-state and ON-state current characteristics of the FET with a fifty one-nm channel length and a 50-nm channel width. By exploiting these characteristics, low-power giant-scale integration (LSI) applications become potential that would not be possible with standard Si-LSI techniques.

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