High Performance of Midwave Infrared HgCdTe e-Avalanche Photodiode Detector


This letter reports on the planning and fabrication of HgCdTe electron-avalanche photodiode (e-APD) for low dark current and high gain for imaging applications. HgCdTe e-APD photodiodes were fabricated within the n+- $nu $ -p+ configuration for FPA at $thirty~mu textm times thirty~mu textm$ pitch. Process for making the specified carrier profile and compositional grading in the absorption and multiplication regions was developed. Graded bandgap profile within the absorption region has been introduced. Shallow mesa etch isolation and effective passivation of side walls were introduced to regulate lateral currents. High quantum potency of 65% makes these APDs suitable for applications like quantum encryption. These measures helped in achieving high avalanche gain of 5550 at 8 V reverse bias in HgCdTe MWIR e-APD for the first time.

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