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Quantized Conductance in Conductive-Bridge Memory Cells

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$hbox{Ag/GeS}_{2}/hbox{W}$ conductive-bridge random access memory (CBRAM) cells are shown to program at room temperature to conductance levels near multiples of the fundamental conductance $G_{0} = hbox{2}e^{2}/h$. This behavior is not accounted for in the traditional view that the conductance of a CBRAM cell is a continuous variable proportional to the maximum current allowed to flow during programming. For on -state resistances on the order of $hbox{1}/G_{0} = hbox{12.9} hbox{k}Omega$ or less, quantization implies that the Ag “conductive bridge” typically contains a constriction, or even an extended chain, that can be as narrow as a single atom. Implications for device modeling and commercial applications are discussed.

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Quantized Conductance in Conductive-Bridge Memory Cells - 4.8 out of 5 based on 90 votes

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