We report the fabrication of completely CMOS-compatible ferroelectric field-effect transistors (FETs) by stabilization of a ferroelectric phase in 10-nm-thin $hbox{Si}:hbox{HfO}_{2}$ . The program and erase operation of this metal–ferroelectric–insulator–silicon FET (MFIS) with $hbox{poly-Si/TiN/Si}:hbox{HfO}_{2}hbox{/SiO}_{2}hbox{/Si}$ gate stack is compared to the transient switching behavior of a TiN-based metal–ferroelectric–metal (MFM) capacitor. Polarization reversal in the MFM capacitor follows a characteristic time and field dependence for ferroelectric domain switching, leading to a higher switching speed with increasing applied field. Similar observations were made for the material when implemented into an MFIS structure. Nonvolatile switching was observed down to 20-ns pulsewidth, yielding a memory window (MW) of 1.2 V. Further increase in gate bias or pulsewidth led to charge injection and degradation of the MW. Retention measurements for up to $hbox{10}^{6} hbox{s}$ suggest a retention of more than ten years.

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