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Improved Vertical p-Type Radio Frequency Metal-Base Transistors

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This letter reports radio frequency (RF) transistors using a high-resistivity p-type float zone silicon wafer. A high-density uniform organic semiconducting single layer is deposited using thermal evaporation technique, and RF transistors with a base layer of about 60 nm are fabricated. We report on a transistor exhibiting a cutoff frequency $(f_{T})$ of 630 kHz. In addition to the cutoff frequency, other important figures of merit for the RF transistor are also presented, including the common-emitter current gain and on/off ratio.

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Improved Vertical p-Type Radio Frequency Metal-Base Transistors - 4.8 out of 5 based on 49 votes

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