ABSTRACT:

This letter investigates the impact of dynamic stress on the degradation of a nanoscale p-channel metal–oxide–semiconductor field-effect transistor (pMOSFET). Experimental results indicate that the off-state stress generated donorlike interface traps $N_{rm it}$ and electron oxide traps, localized near the drain. The on-state stress produced the negative bias temperature instability which generated $N_{rm it}$'s and positive oxide charges $Q_{rm ox}$ distributed uniformly in the channel. Although the electrons trapped by the off-state stress decreased the threshold voltage $vert V_{rm th}vert$, they were detrapped readily by the subsequent on-state stress. A dynamic stress caused the nanoscale pMOSFET to build up $N_{rm it}$ and positive $Q_{rm ox}$, which increased the $vert V_{rm th}vert$ significantly. These new observations indicate that the combined dynamic process can significantly influence the reliability of scaled CMOS inverter circuits.


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