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Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays

1 1 1 1 1 Rating 4.80 (49 Votes)

ABSTRACT:

An electromechanical diode nonvolatile memory cell design is proposed for implementation of compact $(hbox{4F}^{2})$ cross-point memory arrays. The first prototype cells are demonstrated to operate with relatively low set/reset voltages and excellent retention characteristics and are multi-time programmable (with endurance exceeding $hbox{10}^{4}$ set/reset cycles).


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Electromechanical Diode Cell for Cross-Point Nonvolatile Memory Arrays - 4.8 out of 5 based on 49 votes

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