ABSTRACT:

Top-down fabrication is used to produce ZnO nanowires by remote plasma atomic layer deposition over a $hbox{SiO}_{2}$ pillar and anisotropic dry etching. Nanowire field-effect transistors (FETs), with channel lengths in the range of 1.3–18.6 $muhbox{m}$, are then fabricated using these 80 nm $ times$ 40 nm nanowires. Measured electrical results show n-type enhancement behavior and a breakdown voltage $geq$75 V at all channel lengths. This is the first report of high-voltage operation for ZnO nanowire FETs. Reproducible well-behaved electrical characteristics are obtained, and the drain current scales with $1/L$, as expected for long-channel FETs. A respectable $I_{rm ON}/I_{rm OFF}$ ratio of $hbox{2} times hbox{10}^{6}$ is obtained.


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