Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications

1 1 1 1 1 Rating 4.89 (37 Votes)

ABSTRACT:

To integrate bipolar resistive switching cells into crosspoint structures, we serially connect a threshold-switching (TS) $hbox{Pt}/hbox{NbO}_{2}/hbox{Pt}$ device with a memory-switching (MS) $hbox{Pt}/hbox{Nb}_{2}hbox{O}_{5}/ hbox{Pt}$ device and observe the suppression of the undesired sneak current. A simpler $hbox{Pt}/hbox{Nb}_{2}hbox{O}_{5}/hbox{NbO}_{2}/hbox{Pt}$ bilayer oxide device was designed; it simultaneously exhibits TS and MS. The unique device characteristics in the metal/oxide/metal structure can be directly integrated into a crosspoint memory array without the diode; this can significantly reduce the fabrication complexity.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications - 4.9 out of 5 based on 37 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...