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An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High- Dielectrics

1 1 1 1 1 Rating 4.89 (71 Votes)

ABSTRACT:

A simple and effective correction methodology for interference of stress-induced leakage current (SILC) in time-dependent-dielectric-breakdown (TDDB) evaluation of high-$k$ dielectrics is reported. Unlike the violation of weakest link failure property found in conventional TDDB evaluation with SILC interference, we have demonstrated that time-to-failure distributions obtained with this new methodology restores this universal property. Excellent results in terms of improved time to failure and Weibull slope were obtained, thus providing a realistic TDDB projection. The algorithm of this methodology is easy to implement and can be used in daily TDDB evaluation.


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An Effective Correction Methodology for Interference of Stress-Induced Leakage Current in TDDB Evaluation of High- Dielectrics - 4.9 out of 5 based on 71 votes

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