Deep-submicrometer-gap CMOS–MEMS “composite” resonators fabricated using 0.18- $muhbox{m}$-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 $hbox{k}Omega$ at 15.3 MHz. A simple maskless wet release process has been successfully transferred from a 0.35-$muhbox{m}$ platform to an advanced 0.18-$muhbox{m}$ version, capable of offering enhanced gap spacing and transduction area for CMOS–MEMS resonators monolithically integrated with high-performance CMOS circuitry. This proposed platform offers ease of use, fast turnaround time, low cost, convenient prototyping, and inherent MEMS-circuit integration, therefore showing great potential toward future integrated sensing and single-chip RF applications.

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