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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz

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PROJECT TITLE :

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz

ABSTRACT :

We tend to report thirty-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency $(f_T)$ of 370 GHz. The HEMT while not back barrier exhibits an extrinsic transconductance $(g_rm m.ext)$ of 650 mS/mm and an on/off current ratio of $10^6$ thanks to the incorporation of dielectric-free passivation and regrown ohmic contacts with a contact resistance of 0.16 $Omegacdothboxmm$. Delay analysis suggests that the high $f_T$ could be a result of low gate–drain parasitics related to the oblong gate. Although it appears doable to reach five hundred-GHz $f_T$ by more reducing the gate length, it is imperative to analyze alternative structures that supply higher mobility/velocity whereas keeping the best doable electrostatic management in ultrascaled geometry.


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InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and of 370 GHz - 4.7 out of 5 based on 94 votes

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