Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

1 1 1 1 1 Rating 4.87 (15 Votes)

PROJECT TITLE :

Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz

ABSTRACT :

We tend to report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a a hundred-mm Si substrate with low-noise properties up to forty GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (higher than 100 GHz) whereas showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-one-dB minimum noise figure at thirty six GHz with an associated gain of seven.5 dB has been achieved. To our data, this is the most effective noise performance reported within the $hboxK_rm a$-band for any GaN device.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz - 4.9 out of 5 based on 15 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...