PROJECT TITLE :
Sub-1-dB Minimum-Noise-Figure Performance of GaN-on-Si Transistors Up to 40 GHz
We tend to report on the millimeter-wave noise performance of AlN/GaN/AlGaN double heterostructure (DHFET) grown on a a hundred-mm Si substrate with low-noise properties up to forty GHz. The ultrathin-barrier GaN DHFETs simultaneously exhibit high current density, high transconductance, and high frequency performance (higher than 100 GHz) whereas showing low dc-to-RF dispersion and low gate and drain leakage currents. Consequently, sub-one-dB minimum noise figure at thirty six GHz with an associated gain of seven.5 dB has been achieved. To our data, this is the most effective noise performance reported within the $hboxK_rm a$-band for any GaN device.
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