RTD–MOSFET Millimeter-Wave Wavelet Generator


We tend to report on the fabrication of a self-aligned regrown $hboxIn_0.53 hboxGa_0.47hboxAs$ metal–oxide–semiconductor field-result transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to make a highly energy-economical seventy-GHz wavelet generator. The quick switching and low on-resistance of the MOSFET make it doable to kick-begin and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at fifteen Gpulses/s, a peak output power of seven dBm, and an energy consumption of one.nine pJ/pulse.

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