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High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs

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PROJECT TITLE :

High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs

ABSTRACT :

We tend to report a high-speed and low-voltage-driven shift register utilizing self-aligned coplanar amorphous-indium–gallium–zinc–oxide skinny-film transistors (a -IGZO TFTs). The a-IGZO TFTs exhibit field-effect mobility, threshold voltage, and gate-voltage swing of 24.seven $hboxcm^2/hboxVcdot hboxs$, 0.2 V, and 118 mV/dec, respectively. The rise and fall times of the shift register at the provision voltage $(V_rm DD)$ of 1 V are 8 and seven $muhboxs$, respectively, and the output pulse is free from distortion or ripple. For a $V_rm DD$ of 15 V, the clock frequency of the shift register approaches 500 kHz, creating it applicable to high-resolution active-matrix displays.


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High-Speed and Low-Voltage-Driven Shift Register With Self-Aligned Coplanar a-IGZO TFTs - 4.9 out of 5 based on 24 votes

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