Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors


We tend to propose a modified conductance methodology for extraction of the subgap density of states (DOS) in amorphous indium–gallium–zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance–voltage ($C$– $V$) measurement. In the proposed methodology, the subgap DOS [ $g_A(E)$] is extracted from the frequency-dispersive $C$–$V$ characteristics by localized traps in the active channel region. The extracted $g_A(E)$ shows a superposition of the exponential tail states and also the exponential deep states over the bandgap ($N_rm TA = hbox3 times hbox10^18 hboxcm^-3 cdot hboxeV^-1$, $N_rm DA = hbox2.8 times hbox10^17 hboxcm^-3 cdot hboxeV^-1$, $kT_rm TA = hbox0.04 hboxeV$, and $kT_rm DA = hbox0.77 hboxeV$). We have a tendency to note that the gate-bias-dependent $C_rm free$ by free electron charges can be separated from $C_rm loc$ by localized trap charges through the proposed method.

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