Hydrogen Redistribution and Performance Improvement of Silicon Avalanche Photodiode by Low-Temperature Annealing


We report the performance improvement of the silicon avalanche photodiode (APD) for electron detection by annealing. It had been found that the dark current is reduced and that the gain and energy resolution are improved by annealing at five hundred K for 10 h. By means that of the nuclear reaction analysis, the depth distribution of hydrogen in APD was measured before and when annealing. The hydrogen concentration within the close to-surface region was significantly increased by annealing. We discuss that passivation of the impurity and/or defect levels by hydrogen atoms could be a potential reason for the performance improvement of the photodiode.

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