Capacitance–Voltage Measurement With Photon Probe to Quantify the Trap Density of States in Amorphous Thin-Film Transistors


We report on a characterization methodology to quantitatively estimate the interfacial trap density of states (DOS) in skinny-film transistors (TFTs): photon-probe capacitance–voltage ($CV$ ) measurement. The photo-$CV$ methodology was compared to photoexcited charge-assortment spectroscopy, which is another photon-probe methodology using current–voltage ( $I$–$V$) measurement to satisfy the identical purpose. Here, we tend to directly characterized the DOS of amorphous-Si- and amorphous-InGaZnO-primarily based TFTs using the photon-probe $CV$ measurement, and also the results turned out to mainly focus the lure DOS at channel/dielectric interface. On the one hand, the DOS profile by photon-probe $I$– $V$ methodology appeared to give further lure information from the transistor back channel.

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