High-Performance Inverted MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD


We report inverted-type $hboxIn_0.51hboxAl_0.49hboxAs/break hboxIn_0.53hboxGa_0.47hboxAs$ MOSHEMTs heteroepitaxially grown on GaAs substrates by metal–organic chemical vapor deposition. High 2-D electron gas Hall mobility values of 8200 $hboxcm^2/hboxV cdot hboxs$ at 300 K and 33 90zero $hboxcm^2/hboxV cdot hboxs$ at 77 K are achieved. The buried quantum-well channel design is combined with selectively regrown source/drain (S/D) using a gate-last method. A one hundred twenty-nm-channel-length MOSHEMT exhibited a most drain current of 1884 mA/mm, peak transconductance of 1126 mS/mm at $V_ds = hbox0.5 hboxV$ , and a subthreshold slope of 135 mV/dec at $V_ds = hbox0.05 hboxV$. With the regrown S/D, an ultralow on-state resistance of 156 $Omega cdot muhboxm$ was obtained.

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