Light-Induced Hysteresis of In–Ga–Zn–O Thin-Film Transistors With Various Temperatures


We investigated the hysteresis phenomenon in In–Ga–Zn–O thin-film transistors under lightweight illumination. Hysteresis was observed under the 450-nm illumination and was increased with temperature. Light-weight-induced hysteresis occurs thanks to increased subband-gap states at the interface between the gate-insulator layer and therefore the active layer. Increased subband-gap states increase the subthreshold slope (SS) throughout the forward sweep. As temperature will increase, the transition rate from neutral oxygen vacancy $V_O$ to doubly ionized oxygen vacancy $V_O^2+$ increases beneath the identical illumination conditions. The SS of the forward sweep increases with temperature due to the rise in $V_O^2+$ states.

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