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Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures

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Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures


We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction $Delta d$. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement $Delta d$ of $sim!-hbox4 hboxnm$ was extracted from the measurements. More analysis using one-D self-consistent Schrodinger–Poisson solver has been done to validate the measured knowledge. Our simulation results, together with multiple-subband occupancy, justify the increasing capacitance within the measured $C$–$V$ profile in N-polar GaN-primarily based HEMTs.

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Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures - 4.9 out of 5 based on 24 votes

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