PROJECT TITLE :
Quantum Capacitance in N-Polar GaN/AlGaN/GaN Heterostructures
We investigate the effects of quantum capacitance in an N-polar GaN/AlGaN/GaN heterostructures by directly measuring quantum displacement of the electron wavefunction $Delta d$. A comparison between electrically and microscopically measured thicknesses showed negative quantum displacement effects in the inverted high-electron-mobility-transistor (HEMT) structure. As a result of the quantum capacitance effects, a quantum displacement $Delta d$ of $sim!-hbox4 hboxnm$ was extracted from the measurements. More analysis using one-D self-consistent Schrodinger–Poisson solver has been done to validate the measured knowledge. Our simulation results, together with multiple-subband occupancy, justify the increasing capacitance within the measured $C$–$V$ profile in N-polar GaN-primarily based HEMTs.
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