An Accurate Compact Model Considering Direct-Channel Interference of Adjacent Cells in Sub-30-nm nand Flash Technologies


We have a tendency to propose an correct compact model of nand Flash memory, which is totally compatible with a BSIM-4 model. In sub-30-nm nand Flash, adjacent cells directly affect the channel-edge potential of the chosen cell. Due to such direct-channel interference, previous compact models cannot accurately simulate the characteristics of sub-thirty-nm nand strings. During this letter, we describe the interference as the brink voltage variation because of adjacent cells and modification the threshold voltage equation of the BSIM-four model. The equation is semitheoretically derived. Using the proposed model, we have a tendency to simulated several behaviors of twenty seven-nm nand Flash strings. The results show more than 90$percent$ accuracy compared with the silicon measurements.

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