Channel Thickness Dependence of InGaAs Quantum-Well Field-Effect Transistors With High- Gate Dielectrics


We have a tendency to have studied channel thickness dependence of InGaAs quantum-well field-result transistors (QWFETs) with high-$kappa$ gate dielectrics. Device performances of ultrathin five- and ten-nm-channel $hboxIn_0.7hboxGa_0.3hboxAs$ QWFETs with gate length down to sub-fifty-nm regime are investigated. Thinning down the channel improves subthreshold characteristics and reduces the short-channel impact. The five-nm $ hboxIn_0.7hboxGa_0.3hboxAs$ channel $(L_g = hbox40 hboxnm)$ devices exhibit a reduced subthreshold swing (SS) of around a hundred mV/dec and drain-induced barrier lowering (DIBL) of 128 mV/V compared to 10-nm $ hboxIn_0.7hboxGa_0.3hboxAs$ channel devices (SS of $ sim$one hundred forty mV/dec and DIBL of $sim$275 mV/V). However, the disadvantage for thinner channel devices is that the effective channel mobility additionally decreases. At inversion charge density of $hbox3 times hbox10^12/hboxcm^2$, 10-nm $hboxIn_0.7hboxGa_0.3hboxAs$ channel devices exhibit mobility of 1860 $hboxcm^2/hboxVcdothboxs$ versus mobility of 1460 $hboxcm^2/hboxVcdothboxs$ for 5-nm $hboxIn_0.7hboxGa_0.3hboxAs$ channel devices.

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