Analytical Field-Effect Method for Extraction of Subgap States in Thin-Film Transistors


We have a tendency to gift an analytical field-impact technique to extract the density of subgap states (subgap DOS) in amorphous semiconductor thin-film transistors (TFTs), using a closed-form relationship between surface potential and gate voltage. By accounting the interface states in the subthreshold characteristics, the subgap DOS is retrieved, leading to a reasonably accurate description of field-result mobility and its gate voltage dependence. The tactic proposed here is very useful not solely in extracting device performance however additionally in physically primarily based compact TFT modeling for circuit simulation.

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