Graphene-Based Interconnects on Hexagonal Boron Nitride Substrate


We have a tendency to demonstrated graphene interconnects on layered insulator–hexagonal boron nitride ( h-BN). Performance metrics are compared among three material systems: CVD graphene on h-BN, CVD graphene on $ hboxSiO_2$, and exfoliated graphene on $hboxSiO_2$. CVD graphene on h-BN shows approximately nineteen times and eight times improved conductivity as compared with CVD graphene on $hboxSiO_2$ and exfoliated graphene on $hboxSiO_2$, respectively. For graphene on h-BN, an ultrahigh carrier mobility ( $sim!!hbox15,hbox000 hboxcm^2/hboxV cdot hboxs$ at a carrier density of $hbox1 times hbox10^12 hboxcm^-2$) is observed. The breakdown power density is a lot of increased, attributed to the higher thermal conductivity of h-BN (than that of $hboxSiO_2$) that facilitates heat dissipation. Electrical annealing reduces graphene sheet resistance. Unlike the case for $hboxSiO_2$ substrate, the absence of positive shift of Dirac purpose might be because of the interface-state-free nature of h-BN substrate. The research suggests that h-BN might be used as an alternative substrate material for graphene-based mostly interconnects, overcoming performance limit and reliability problems caused by the $hboxSiO_2$ substrate.

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