Vertical Leakage/Breakdown Mechanisms in AlGaN/GaN-on-Si Devices


Vertical leakage/breakdown mechanisms in AlGaN/GaN high-electron-mobility transistors grown on low-resistivity p-sort (111) Si substrate are studied by temperature-dependent current–voltage ($I$–$V$) measurements. It is found that the high-to-substrate vertical breakdown voltage $(BV)$ is dominated by the house-charge-limited current conduction involving both acceptor and donor traps within the GaN buffer/transition layer. From the temperature-dependent transient backgating measurements, the acceptor level at $E_V + hbox543 hboxmeV$ and also the donor level at $E_C$-616 meV were identified.

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