PROJECT TITLE :
Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction
Underneath an ultralow driven current density about 15 $hboxmA/cm^2$, a blue electroluminescence might be observed from the nanocrystalline n-ZnO/p-GaN heterojunction lightweight-emitting diode. The photoluminescence spectrum showed a dominant sharp close to-band-edge emission, and also the deep-level emission of the nanocrystalline ZnO films wasn't observed. Current–voltage characteristics of the heterojunctions indicated a diodelike rectification behavior. With the increase in the injection current, an ultraviolet emission was observed thanks to the recombination in ZnO.
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