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Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction

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PROJECT TITLE :

Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction

ABSTRACT :

Underneath an ultralow driven current density about 15 $hboxmA/cm^2$, a blue electroluminescence might be observed from the nanocrystalline n-ZnO/p-GaN heterojunction lightweight-emitting diode. The photoluminescence spectrum showed a dominant sharp close to-band-edge emission, and also the deep-level emission of the nanocrystalline ZnO films wasn't observed. Current–voltage characteristics of the heterojunctions indicated a diodelike rectification behavior. With the increase in the injection current, an ultraviolet emission was observed thanks to the recombination in ZnO.


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Ultralow Emission Threshold Light-Emitting Diode of Nanocrystalline ZnO/p-GaN Heterojunction - 4.8 out of 5 based on 49 votes

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