Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation


Transistor mismatch because of variability in short-channel effects induced by random dopant fluctuation is modeled in the sunshine of thirty two-nm HKMG SOI dense SRAM bit-cell information. We have a tendency to present a easy analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode. The increased mismatch in saturation can be mitigated by optimizing the choice of halo and well implants for channel doping.

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