Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures


Top-gate n-sort GaN skinny-film transistors (TFTs) based on AlN/GaN heterostructures were fabricated. GaN and AlN thin films were sequentially deposited by the reactive dc magnetron sputtering technique at area temperature on quartz. The proposed GaN TFTs exhibit smart electrical performance, like field mobility of 2.5 $hboxcm^2/hboxV cdot hboxs$, threshold voltage of two.4 V, on/off-current ratio of $hbox1.2times hbox10^5$, and subthreshold swing of 0.five V/dec. The proposed GaN TFT has great potential in the applying of next-generation flat-panel displays.

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