Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures

1 1 1 1 1 Rating 4.89 (18 Votes)

PROJECT TITLE :

Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures

ABSTRACT :

Top-gate n-sort GaN skinny-film transistors (TFTs) based on AlN/GaN heterostructures were fabricated. GaN and AlN thin films were sequentially deposited by the reactive dc magnetron sputtering technique at area temperature on quartz. The proposed GaN TFTs exhibit smart electrical performance, like field mobility of 2.5 $hboxcm^2/hboxV cdot hboxs$, threshold voltage of two.4 V, on/off-current ratio of $hbox1.2times hbox10^5$, and subthreshold swing of 0.five V/dec. The proposed GaN TFT has great potential in the applying of next-generation flat-panel displays.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Top-Gate GaN Thin-Film Transistors Based on AlN/GaN Heterostructures - 4.9 out of 5 based on 18 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...