PROJECT TITLE :
Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering
TiN films have been grown on $hboxSiO_2$ by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of twenty-two $^circ hboxC$–600 $^circhboxC$. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with no less than 0.38 $pm$ zero.05 nm and one.seven $pm$ zero.a pair of nm, respectively, at 400 $^circhboxC$. We tend to notice that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on $hboxSiO_2$ at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.
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