Impact of Passivation Thickness in Highly Scaled GaN HEMTs


This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-thirty and seventy nm. Because the $hboxAl_2hboxO_3$ passivation thickness will increase, this collapse in 80- $muhboxs$ pulsed-$I$–$V$ measurements decreases from thirty% to thirteenp.c, whereas dc characteristics are almost unchanged with the exception of accelerating drain-induced barrier lowering. The thicker passivation will increase the fringing gate capacitance, that will be concerning thirtyp.c of the entire gate capacitance in the devices with a gate length below 35 nm. This capacitance results in a significant drop of current-gain cutoff frequency $(f_T)$, and its result is a lot of important within the shorter gate length devices.

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