Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

Impact of Passivation Thickness in Highly Scaled GaN HEMTs

1 1 1 1 1 Rating 4.71 (68 Votes)

PROJECT TITLE :

Impact of Passivation Thickness in Highly Scaled GaN HEMTs

ABSTRACT :

This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-thirty and seventy nm. Because the $hboxAl_2hboxO_3$ passivation thickness will increase, this collapse in 80- $muhboxs$ pulsed-$I$–$V$ measurements decreases from thirty% to thirteenp.c, whereas dc characteristics are almost unchanged with the exception of accelerating drain-induced barrier lowering. The thicker passivation will increase the fringing gate capacitance, that will be concerning thirtyp.c of the entire gate capacitance in the devices with a gate length below 35 nm. This capacitance results in a significant drop of current-gain cutoff frequency $(f_T)$, and its result is a lot of important within the shorter gate length devices.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


Impact of Passivation Thickness in Highly Scaled GaN HEMTs - 4.7 out of 5 based on 68 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...