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Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs

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Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs


This letter reports the result of growth temperature on carrier transport characteristics in $hboxIn_0.4hboxGa_0.6hboxSb/AlSb$ heterostructure and demonstrates that hole mobility was enhanced by eliminating a parallel conducting channel within the buffer layers. Primarily based on optimized growth conditions, hole mobility as high as 1220 $ hboxcm^2/hboxVcdothboxs$ with carrier concentration of $hbox1.3 times hbox10^12 hboxcm^-2$ was achieved. A zero.two- $muhboxm-gate-length hboxIn_0.4hboxGa_0.6hboxSb/AlSb$ p-channel device exhibited a most drain current of 102 mA/mm, a peak transconductance of ninety two mS/mm, and an on-state breakdown voltage over three V. The pinchoff was observed for a gate bias of zero.6 V at drain current of 1 mA/mm. This-gain and power-gain cutoff frequencies were 15 and 20 GHz, respectively.

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Device Characteristics of InGaSb/AlSb High-Hole-Mobility FETs - 4.6 out of 5 based on 54 votes

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