Sell Your Projects | My Account | Careers | This email address is being protected from spambots. You need JavaScript enabled to view it. | Call: +91 9573777164

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

1 1 1 1 1 Rating 4.80 (90 Votes)

PROJECT TITLE :

A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

ABSTRACT :

This letter reports a easy processing methodology for fabricating metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide $( hboxH_2hboxO_2)$ oxidation technique. Aluminum oxide $( hboxAlO_x)$ was shaped on the surface of the AlGaN barrier because the gate dielectric of the MOS-gate structure. By using the capacitance–voltage measurement, the dielectric constant $(kappa)$ of $hboxAlO_x$ was determined to be 9.a pair of. The present MOS-HEMT has demonstrated enhanced saturation drain current density at $V_rm GS = hbox0 hboxV$$(I_rm DSS0)$ of 552.3 mA/mm, most extrinsic transconductance $(g_m, max)$ of 136 mS/mm, wide gate voltage swing of 2.nine V, and 2-terminal gate–drain breakdown/flip-on voltages $(BV_rm GD/V_rm on)$ of $-$132.two/1.eighty two V.


Did you like this research project?

To get this research project Guidelines, Training and Code... Click Here


A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors - 4.8 out of 5 based on 90 votes

Project EnquiryLatest Ready Available Academic Live Projects in affordable prices

Included complete project review wise documentation with project explanation videos and Much More...