A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors


This letter reports a easy processing methodology for fabricating metal–oxide–semiconductor high-electron-mobility transistors (MOS-HEMTs) by using hydrogen peroxide $( hboxH_2hboxO_2)$ oxidation technique. Aluminum oxide $( hboxAlO_x)$ was shaped on the surface of the AlGaN barrier because the gate dielectric of the MOS-gate structure. By using the capacitance–voltage measurement, the dielectric constant $(kappa)$ of $hboxAlO_x$ was determined to be 9.a pair of. The present MOS-HEMT has demonstrated enhanced saturation drain current density at $V_rm GS = hbox0 hboxV$$(I_rm DSS0)$ of 552.3 mA/mm, most extrinsic transconductance $(g_m, max)$ of 136 mS/mm, wide gate voltage swing of 2.nine V, and 2-terminal gate–drain breakdown/flip-on voltages $(BV_rm GD/V_rm on)$ of $-$132.two/1.eighty two V.

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